WPMD2011 dual p-channel -20v, -4.4a, 5 2 m
power mosfet description the WPMD2011 is p-channel enhancement dual mos field effect transistor. uses advanced trench technology and design to provide excellent r ds(on) with low gate charge. this device is suitable for use in dc-dc conversion and power switch applications. standard product WPMD2011 is pb-free. features z trench technology z supper high density cell design z excellent on resistance for highest dc current z extremely low threshold voltage z bidirectional current flow with common source configuration z dfn2x2 package provides exposed drain pad for excellent thermal conduction applications z driver for relay, solenoid, motor, led etc. z dc-dc converter circuit z power switch z high side load switch z battery management and charging circuit dfn2x2-6l pin configuration (top view) wlsi gyww wlsi = company code g = device code y = year (last digit) ww = week order information device package shipping WPMD2011-6/tr dfn2x2-6l 3000/tape&reel v (br)dss rds(on) ( ? ) 0.052 @ -4.5v 0.064 @ -2.5v 0.080 @ -1.8v -20 0.090 @ -1.5v 1 2 3 4 5 6 d1 d2 s1 g1 d2 s2 g2 d1 1 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
thermal resistance ratings single operation parameter symbol typical maximum unit t ? 10 s 45 60 junction-to-ambient thermal resistance a steady state r ja 62 85 t ? 10 s 80 115 junction-to-ambient thermal resistance b steady state r ja 120 170 junction-to-case thermal resistance steady state r jc 32 40 c/w dual operation t ? 10 s 40 55 junction-to-ambient thermal resistance a steady state r ja 58 80 t ? 10 s 75 110 junction-to-ambient thermal resistance b steady state r ja 115 160 junction-to-case thermal resistance steady state r jc 30 36 c/w a. surface mounted on fr4 board using 1 in sq pad size, 1oz cu. b. surface mounted on fr4 board using the minimum recommended pad size, 1oz cu. c. repetitive rating, pulse width limited by junction temperature, tp=10s, duty cycle=1% d. repetitive rating, pulse width limited by junction temperature t j (max)=150c absolute maximum ratings (ta = 25 c, unless otherwise noted) parameter symbol 10s steady state unit drain-source voltage v ds -20 gate-source voltage v gs 12 v t a =25c -4.4 -3.7 continuous drain current (t j = 150 c) a t a =70c i d -3.5 -3.0 a t a =25c 2.0 1.4 maximum power dissipation a t a =70c p d 1.3 0.9 w t a =25c -3.2 -2.6 continuous drain current (t j = 150 c) b t a =70c i d -2.5 -2.1 a t a =25c 1.0 0.7 maximum power dissipation b t a =70c p d 0.6 0.4 w pulsed drain current c i dm -15 a operating junction temperature t j 150 c storage temperature t stg -55 to 150 c WPMD2011 2 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical characteristics (ta= 25c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs = 0 v, i d = 250 ua 20 v zero gate voltage drain current i dss v ds =16 v, v =0v -1 ua gate-source leakage current i gss v ds = 0 v, v gs = 12 v 100 na on characteristics gate threshold voltage v gs(th) v gs = v ds , i d = 250 ua -0.35 -0.6 -1.0 v v gs = 4.5v, i d = 4.0 a 52 v gs = 2.5v, i d = 3.0a 64 v gs = 1.8v, i d = 2.0a 80 drain-source on resistance r ds(on) v gs = 1.5v, i d = 1.0a 90 m ? forward transconductance g fs v ds = 5 v, i d = 3.6a 10 s charges, capacitances and gate resistance input capacitance c iss 1130 output capacitance c oss 120 reverse transfer capacitance c rss v gs = 0 v, f = 1.0 mhz, v ds = 10 v 115 pf total gate charge q g(tot) 11 threshold gate charge q g(th) 0.6 gate-source charge q gs 1.3 gate-drain charge q gd v gs = 4.5 v, v ds = 10 v, i d = 2.7 a 2.7 nc switching characteristics turn-on delay time td( on) 9.5 rise time tr 5.8 turn-off delay time td (off) 54 fall time tf v gs = 4.5 v, v ds = 6 v, r l =3 ? , r g =6 ? 13 ns body diode characteristics forward recovery voltage v sd v gs = 0 v, i s = 1.0 a -0.62 -1.5 v gs 70 85 100 150 WPMD2011 3 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical performance characteristics output characteristics on resistance vs. drain current on resistance vs. junction temperature transfer characteristics on resistance vs. gate to source voltage threshold voltage vs. temperature 012345 0 5 10 15 20 v gs =-2.5v v gs =-2.0v v gs =-1.5v v gs =-1.0v v gs =-3.0v,-4.0v,-4.5v -i ds -drain-to-source current (a) -v ds -drain-to-source voltage(v) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 5 10 15 20 t=125 o c t=25 o c t=-50 o c -i ds -drain to source current(a) -v gs -gate-to-source voltage(v) 012345 0 30 60 90 120 v gs =-4.5v v gs =-2.5v r ds(on) - on-resistance (m : ) -i ds -drain-to-source current(a) 012345 25 50 75 100 i ds =-2.0a i ds =-3.3a r ds(on) - on-resistance (m : ) -v gs -gate-to-source voltage(v) -50 -25 0 25 50 75 100 125 150 40 45 50 55 60 65 70 75 80 r ds(on) - on-resistance (m : ) temperature( o c) -50 -25 0 25 50 75 100 125 150 0.3 0.4 0.5 0.6 0.7 0.8 v gs(th) gate threshold voltage (v) temperature ( o c) WPMD2011 4 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
capacitance single pulse power drain to source diode forward voltage safety operation area transient thermal response (junction-to-ambient) 0 4 8 12 16 20 0 250 500 750 1000 1250 1500 1750 v gs =0v f=1mhz ciss coss crss c - capacitance(pf) -v ds drain-to-source voltage (v) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.36 0.40 0.44 0.48 0.52 0.56 0.60 0.64 t=150 o c t= 25 o c -v sd -source-to-drain voltage(v) -i sd -source to drain current(a) 1000 100 1 0.001 0.01 0.1 10 power (w) pulse (s) 20 10 5 15 0 100 1 0.1 1 10 100 0.01 10 0.1 100 s limited by r ds(on) bvdss limited 1ms 10 ms 100 ms 1s,10s dc v ds - drain-to-source voltage (v) - drain current (a) i d 1 0.1 0.01 normalized e ective t ransient thermal impedance 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 square wave pulse duration (s) single pulse 0.02 0.05 0.1 0.2 duty cycle = 0.5 1. duty cycle, d = 2. per unit base = r thja = 75 c/w 3. t j - t a = p d z thja (t) t 1 t 2 t 1 t 2 4. surface mounted p d WPMD2011 5 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
packaging information dfn2x2-6l top view side view bottom view dimension in millimeters symbol min. max. a 0.700 0.800 a1 0.000 0.050 a3 0.203ref d 1.900 2.100 e 1.900 2.100 e 1 0 . 75 0 0 . 85 0 d 1 0.600 0 . 7 00 k 0.200min b 0. 25 0 0.3 5 0 e 0.650typ l 0.250 0. 3 50 WPMD2011 6 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
|
